for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t HMC757LP4E v00.0610 general description features functional diagram the h m c757 lp 4 e is a three stage gaas ph em t mmi c 1 w att p ower amplifer which operates be - tween 16 and 24 ghz. the h m c757 lp 4 e provides 20.5 db of gain, and 27.5 dbm of saturated output power and 21% p a e from a +5v supply. the rf i / o s are dc blocked and matched to 50 o hms. the 4x4 mm plastic package eliminates the need for wirebon - dig, and is compatible with surface mount manufactur - ing techniques. s aturated o utput p ower: 27.5 dbm @ 21% p a e high o utput ip 3: 34.5 dbm high gain: 20.5 db dc s upply: +5v @ 400 ma n o e xternal m atching r equired 24 l ead 4x4 mm sm t p ackage: 16 mm2 electrical specifcations, t a = +25 c, vdd = +5v, idd = 400ma [1] typical applications the h m c757 lp 4 e is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? v s at ? m ilitary & s pace p arameter m in. typ. m ax. units f requency r ange 16 - 24 ghz gain 18.5 20.5 db gain variation o ver temperature 0.028 db/ c i nput r eturn l oss 11 db o utput r eturn l oss 12 db o utput p ower for 1 db compression ( p 1db) 24.5 26.5 dbm s aturated o utput p ower ( p sat) 27.5 dbm o utput third o rder i ntercept ( ip 3) [2] 34.5 dbm total s upply current ( i dd) 400 ma [1] adjust vgg between -2 to 0v to achieve i dd = 400 ma typical. [2] m easurement taken at p out / tone = +16 dbm gaas phemt mmic ? watt power amplifier, 16 - 24 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz -30 -20 -10 0 10 20 30 12 14 16 18 20 22 24 26 28 s21 s11 s22 frequency (ghz) response (db) -20 -16 -12 -8 -4 0 16 18 20 22 24 +25c +85c -40c frequency (ghz) return loss (db) 12 16 20 24 28 16 18 20 22 24 +25c +85c -40c frequency (ghz) gain (db) -24 -20 -16 -12 -8 -4 0 16 18 20 22 24 +25c +85c -40c frequency (ghz) return loss (db) 21 23 25 27 29 31 16 18 20 22 24 +25c +85c -40c frequency (ghz) p1db (dbm) 23 25 27 29 31 33 16 18 20 22 24 5v 6v 7v frequency (ghz) p1db (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t output ip3 vs. supply current, pout/tone = +16 dbm output ip3 vs. temperature, pout/tone = +16 dbm psat vs. supply current (idd) p1db vs. supply current (idd) HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz 21 23 25 27 29 31 16 18 20 22 24 350ma 375ma 400ma frequency (ghz) p1db (dbm) 21 23 25 27 29 31 16 18 20 22 24 350ma 375ma 400ma frequency (ghz) psat (dbm) 25 30 35 40 45 16 18 20 22 24 +25c +85c -40c frequency (ghz) ip3 (dbm) 25 30 35 40 45 16 18 20 22 24 350ma 375ma 400ma frequency (ghz) ip3 (dbm) psat vs. temperature psat vs. supply voltage 23 25 27 29 31 33 16 18 20 22 24 +25c +85c -40c frequency (ghz) psat (dbm) 23 25 27 29 31 33 16 18 20 22 24 5v 6v 7v frequency (ghz) psat (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 0 10 20 30 40 50 60 70 5 7 9 11 13 15 17 19 21 23 16 ghz 18 ghz 20 ghz 22 ghz 24 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 5 7 9 11 13 15 17 19 21 23 16 ghz 18 ghz 20 ghz 22 ghz 24 ghz pout/tone (dbm) im3 (dbc) 0 5 10 15 20 25 30 35 -18 -13 -8 -3 2 7 12 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -80 -70 -60 -50 -40 -30 -20 -10 0 16 18 20 22 24 +25c +85c -40c frequency (ghz) isolation (db) 0 10 20 30 40 50 60 70 5 7 9 11 13 15 17 19 21 23 16 ghz 18 ghz 20 ghz 22 ghz 24 ghz pout/tone (dbm) im3 (dbc) HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz power compression @ 20 ghz reverse isolation vs. temperature output ip3 vs. supply voltage, pout/tone = +16 dbm output im3 @ vdd = +6v output im3 @ vdd = +7v output im3 @ vdd = +5v 25 30 35 40 45 16 18 20 22 24 5.0v 6.0v 7.0v frequency (ghz) ip3 (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz absolute maximum ratings drain bias voltage (vdd) 7v rf i nput p ower ( rfin ) 23 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 40 m w /c above 85 c) 2.7 w thermal r esistance (channel to exposed ground paddle) 24.85 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +5.0 400 +5.5 400 +6.0 400 note: amplifer will operate over full voltage ranges shown above vgg adjusted to achieve idd = 400 ma at +5.5v typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions power dissipation gain & power vs. supply voltage @ 20 ghz gain & power vs. supply current @ 20 ghz 10 15 20 25 30 35 350 360 370 380 390 400 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 10 15 20 25 30 35 5 5.5 6 6.5 7 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 1.5 1.7 1.9 2.1 2.3 2.5 -18 -14 -10 -6 -2 2 6 10 16 ghz 18 ghz 20 ghz 22 ghz 24 ghz input power (dbm) power dissipation (w)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz outline drawing no tes: 1. p ackag e b o dy m at eri a l : a lu min a 2. le ad a n d g ro u n d p add le pl at in g: 30-80 mi c roin ch es g ol d o v er 50 mi c roin ch es minim u m ni ck el . 3. d imensions a re in in ch es [ millime t ers ]. 4. le ad sp ac in g t oler a n c e is non -cu m u l at i v e 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm datu m -c- 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. c l a ssifie d a s mois tu re sensi t i v i ty le v el ( msl ) 1. p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c757 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h757 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz pin descriptions application circuit p in n umber f unction description i nterface s chematic 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 g n d these pins and package bottom must be connected to rf /dc ground. 3 rfin this pin is ac coupled and matched to 50 o hms. 8 - 11, 20, 22 n /c the pins are not connected internally; however, all data shown herein was measured with these pins connected to rf /dc ground externally. 16 rfo ut this pin is ac coupled and matched to 50 o hms. 21 vdd drain bias for amplifer. e xternal bypass caps 100p f , 0.1u f and 4.7u f are required 23 vgg gate control for p a. adjust vgg to achieve recommended bias current. e xternal bypass caps 100p f , 0.1u f and 4.7u f are required.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 HMC757LP4E v00.0610 gaas phemt mmic ? watt power amplifier, 16 - 24 ghz evaluation pcb list of materials for evaluation pcb 131216 [1] i tem description j1, j2 2.9 mm connectors j3, j4 dc p ins c1, c16 100 p f capacitor, 0402 p kg. c5, c17 10 kp f capacitor, 0402 p kg. c9, c18 4.7 f capacitor, 0402 p kg. u1 h m c757 lp 4 e p ower amplifer p cb [2] 125559 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request.
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